Subject: Modeling and simulations of nanoelectronic devices (17.EM514A )
The aim of the course is to learn physical principles and phenomena which arrive in modern nanoelectronic devices. Students will acquire knowledge in the field of modeling and testing of nanoelectronics’ device and structure response (semiconductive nanostructures, nanotransistors, ultra scaled FET transistors, tunnel field effect transistors, spintronic devices, nano memory cells QDOTs)
Ability to model nanoelectroni devices and properties of nanostructures using MATLAB and NEMO5 software. Understanding of electrical characteristics of spin memory devices, nanotransistors and semiconductive nanostructures.
Ballistic and Diffusive Transport. Elastic Resistor. Diffusion Equation for Ballistic Transport. Electron-electron interatction. NEGF method for modeling of nanoelectronic devices. Phonon Transport. Spin Transport.
Lectures. Laboratory excercises.
| Authors | Title | Year | Publisher | Language |
|---|---|---|---|---|
| 2012 | English | |||
| 2016 | English | |||
| 2005 | English |
| Course activity | Pre-examination | Obligations | Number of points |
|---|---|---|---|
| Final exam - part one | No | Yes | 20.00 |
| Final exam - part two | No | Yes | 50.00 |
| Computer excersise defence | Yes | Yes | 30.00 |
Prof. Stojanović Goran
Full Professor
Lectures
Assoc. Prof. Samardžić Nataša
Associate Professor
Practical classes
Asst. Prof. Kojić Sanja
Assistant Professor
Laboratory classes
Faculty of Technical Sciences
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Contact:
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© 2024. Faculty of Technical Sciences.