Modeling and simulations of nanoelectronic devices | Faculty of Technical Sciences

Subject: Modeling and simulations of nanoelectronic devices (17.EM514A)

General information:

Category	Professional-applicative
Scientific or art field	Electronics
ECTS	4

The aim of the course is to learn physical principles and phenomena which arrive in modern nanoelectronic devices. Students will acquire knowledge in the field of modeling and testing of nanoelectronics’ device and structure response (semiconductive nanostructures, nanotransistors, ultra scaled FET transistors, tunnel field effect transistors, spintronic devices, nano memory cells QDOTs)

Ability to model nanoelectroni devices and properties of nanostructures using MATLAB and NEMO5 software. Understanding of electrical characteristics of spin memory devices, nanotransistors and semiconductive nanostructures.

Ballistic and Diffusive Transport. Elastic Resistor. Diffusion Equation for Ballistic Transport. Electron-electron interatction. NEGF method for modeling of nanoelectronic devices. Phonon Transport. Spin Transport.

Lectures. Laboratory excercises.

Authors	Title	Year	Publisher	Language
S. Datta	Lessons to Nanoelectronics	2012	World Scientific Publishing Company	English
S. Datta	Quantum Transport: Atom to Transistor	2005	Cambridge University Press	English
P. Harison , A. Valavanis	Quantum Wells, Wires and Dots	2016	Wiley	English

Course activity	Pre-examination	Obligations	Number of points
Final exam - part two	No	Yes	50.00
Computer excersise defence	Yes	Yes	30.00
Final exam - part one	No	Yes	20.00

Prof. Goran Stojanović

Full Professor

Lectures

Assoc. Prof. Nataša Samardžić

Associate Professor

Practical classes

Asst. Prof. Sanja Kojić

Assistant Professor

Laboratory classes

Faculty of Technical Sciences

University of Novi Sad

Contact:

Address: Trg Dositeja Obradovića 6, 21102 Novi Sad

Phone: (+381) 21 450 810
(+381) 21 6350 413

Fax : (+381) 21 458 133
Emejl: ftndean@uns.ac.rs