MODELOVANJE MEMRISTORA KORIŠĆENJEM TEORIJE HISTEREZISA

  • Stojanka Bratić
Ključne reči: memristor, histerezis, Takačev model

Apstrakt

U ovom radu je predstavljena veza između postojanja klasične histerezisne petlje u fluks-naelektrisanje ravni, i uštinute histerezisne petlje u naponsko-strujnoj ravni memristora.

Reference

[1] L. O. Chua, Everything you wish to know about memristors but are afraid to ask. Radioengineering, 2015, vol. 24, no. 2, p. 319-368. DOI: 10.13164/re.2015.0319
[2] S. P. Adhikari, M. P. Sah, H. Kim and L. O. Chua, "Three Fingerprints of Memristor," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 60, no. 11, pp. 3008-3021, Nov. 2013, doi: 10.1109/TCSI.2013.2256171.
[3] L. Chua, “Memristor, Hodgkin–Huxley, and Edge of Chaos”, Nanotechnology, Vol. 24, No 11, Sept. 2013, DOI 10.1088/0957-4484/24/38/383001
[4] D. Lin, S. Y. R. Hui and L. O. Chua, "Gas Discharge Lamps Are Volatile Memristors," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 61, no. 7, pp. 2066-2073, July 2014, doi: 10.1109/TCSI.2014.2304659.
[5] Corinto, F.; Ascoli, A., “Memristive diode bridge with LCR filter”, Electronics Letters, 2012, Vol 48, (14), p. 824-825, DOI: 10.1049/el.2012.1480
[6] Takacs, J. Mathematics of Hysteretic Phenomena. Weinheim (Germany): Wiley-VCH, 2006. ISBN: 9783527404018
Objavljeno
2025-04-04
Sekcija
Elektrotehničko i računarsko inženjerstvo