KORIŠĆENJE MODERNIH PREKIDAČKIH KOMPONENTI U UREĐAJIMA ENERGETSKE ELEKTRONIKE
Ključne reči:
Silicijum, Silicijum karbid, energetska elektronika
Apstrakt
Ovim radom analizirani su nedostaci i prednosti upotrebe novih generacija prekidačkih komponenti u uređajima energetske elektronike. Analiza je vršena poređenjem snimljenih talasnih oblika napona i struja poluprovodničkih komponenti izrađenih od silicijuma i silicijum karbida. Vršenjem ogleda prikazan je uticaj induktivnosti jednosmernog među kola na napon komponenti prilikom isključenja, uticaj promene otpornosti upravljačkog kola na brzinu uključenja i isključenja kao i uticaj materijala izrade komponenti na brzinu uključenja i isključenja.
Reference
[1] https://www.electricalindia.in/power-electronics-for-energy-efficiency/
[2] Ashutosh Sharma, Soon Jae Lee, Young Joo Jang and Jae Pil Jung, „SiC based Technology for High Power Electronics and Packaging Applications“, University of Seoul, Korea, 2014.
[3] https://grahamlab.gatech.edu/research-2/ultra-wide-band-gap-semiconductor-materials/
[4] https://www.digikey.sk/en/articles/working-sic-mosfets-challenges-design-recommendations
[5] https://www.tel.com/museum/magazine/material/150327_interview02/index.html
[6] https://www.ulvac.co.jp/wiki/en/sic_powerdevice_2016/
[7] https://www.digikey.dk/da/articles/introduction-to-gan-technology
[8] https://www.power-and-beyond.com/gan-systems-2021-predictions-for-the-power-industry-a-990612/
[9] https://www.powerelectronicsnews.com/10-things-to-know-about-gan/
[10] Andreas Giessmann, „Influence of DC-Link Inductance on Switching Performance and Power Losses“, SEMIKRON International GmbH, 2017.
[11] Branko D. Popović, „Osnovi Elektrotehnike 2“, Akademska misao, Beograd, 2004.
[12] Dr. Ing. Arendt Wintrich, Dr.-Ing. Ulrich Nicolai, Dr. techn. Werner Tursky, Univ.-Prof. Dr.-Ing. Tobias Reimann, „Application Manual Power Semiconductors“, SEMIKRON International GmbH, 2015.
[13] S. Tiwari, O.-M. Midtg˚ard, T. M. Undeland, „SiC MOSFETs for Future Motor Drive Applications“, Norwegian University of Science and Technology
[14] Motonobu Joko, Mitsubishi Electric Corp., Akiko Goto, Mitsubishi Electric Corp., Maki Hasegawa, Mitsubishi Electric Corp., Satoshi Miyahara, Mitsubishi Electric Corp., Haruki Murakami, Mitsubishi Electric Corp., „Snubber circuit to suppress the voltage ringing for SiC device“, PCIM, 2015.
[2] Ashutosh Sharma, Soon Jae Lee, Young Joo Jang and Jae Pil Jung, „SiC based Technology for High Power Electronics and Packaging Applications“, University of Seoul, Korea, 2014.
[3] https://grahamlab.gatech.edu/research-2/ultra-wide-band-gap-semiconductor-materials/
[4] https://www.digikey.sk/en/articles/working-sic-mosfets-challenges-design-recommendations
[5] https://www.tel.com/museum/magazine/material/150327_interview02/index.html
[6] https://www.ulvac.co.jp/wiki/en/sic_powerdevice_2016/
[7] https://www.digikey.dk/da/articles/introduction-to-gan-technology
[8] https://www.power-and-beyond.com/gan-systems-2021-predictions-for-the-power-industry-a-990612/
[9] https://www.powerelectronicsnews.com/10-things-to-know-about-gan/
[10] Andreas Giessmann, „Influence of DC-Link Inductance on Switching Performance and Power Losses“, SEMIKRON International GmbH, 2017.
[11] Branko D. Popović, „Osnovi Elektrotehnike 2“, Akademska misao, Beograd, 2004.
[12] Dr. Ing. Arendt Wintrich, Dr.-Ing. Ulrich Nicolai, Dr. techn. Werner Tursky, Univ.-Prof. Dr.-Ing. Tobias Reimann, „Application Manual Power Semiconductors“, SEMIKRON International GmbH, 2015.
[13] S. Tiwari, O.-M. Midtg˚ard, T. M. Undeland, „SiC MOSFETs for Future Motor Drive Applications“, Norwegian University of Science and Technology
[14] Motonobu Joko, Mitsubishi Electric Corp., Akiko Goto, Mitsubishi Electric Corp., Maki Hasegawa, Mitsubishi Electric Corp., Satoshi Miyahara, Mitsubishi Electric Corp., Haruki Murakami, Mitsubishi Electric Corp., „Snubber circuit to suppress the voltage ringing for SiC device“, PCIM, 2015.
Objavljeno
2022-07-07
Sekcija
Elektrotehničko i računarsko inženjerstvo
